Physics of Semiconductor Devices
半導(dǎo)體器件物理
Author: Massimo Rudan
原文地址：https://www.zhisci.com/pdfshow/17700
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
這本書描述了半導(dǎo)體的基本物理窟她，包括傳輸模型的層次結(jié)構(gòu)歼秽，并將理論與實際半導(dǎo)體器件的功能聯(lián)系起來。在保持概念的內(nèi)在一致性和解釋各種近似水平的同時倦炒，細節(jié)被仔細地計算出來丈挟，并從基礎(chǔ)物理中推導(dǎo)出來刁卜。由于硅在工業(yè)上的重要性，示例以硅為基礎(chǔ)曙咽。包括幾個章節(jié)蛔趴，為讀者提供了理解晶體輸運性質(zhì)所必需的量子力學(xué)概念。描述了含有位置依賴雜質(zhì)分布的晶體的行為例朱，并導(dǎo)出了半導(dǎo)體器件的不同層次傳輸模型（從Boltzmann輸運方程到流體動力學(xué)和漂移擴散模型）孝情。然后詳細介紹了雙極型半導(dǎo)體器件的結(jié)構(gòu)模型。最后幾章介紹了一些基本的制作步驟洒嗤，以及半導(dǎo)體器件參數(shù)的測量方法箫荡。
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