表達式
- w tilde
- hat y
- x dagger
行文
- w.r.t = with regard to = about
- peculiar aspects
- not easily extendable to other devices
- corpuscular 微小的 重音2
- The following paragraphs will deal with those issues in detail.
- simplified and tractable model of the actual device
- a top view of the device 俯視圖
- The contacts extend over areas of few thousand um2. 接觸的面積
- The separation between S and D is a few um. 距離
- There's no significant variation of physical quantity along the direction perpendicular to the x-y plane.
- spatial inhomogenities along the z direction
- The barrier is reduced when a positive bias is applied to the semiconductor and it is increased for the opposite polarity.
- The sum is over the mesh points / super-particles.
- reproduce the physical reality
- accuracy of the results VS the cost effectiveness of the algorithm
- by varing the gate and drain bias 改變電壓 vary the bias
- By collecting the above results, we have ... 整理上面的公式可以得到
- This section surveys the history of instruction set architectures (ISAs) over time.
- one can readily argue that
- the research on xxx was shrunk. 研究變少
- Rapid progress in xxx was promptly followed by xxxx.
- Raison d'etre 存在的理由
- The Ge- and Si-based technologies were spawned in 1947 by the demonstration of the first transistor. 雨后春筍般出現(xiàn)
幾個容易忘記的點
金屬半導體接觸
- 外加電壓是調整半導體一側的電壓降谣殊，金屬一側認為沒有電壓降
- 真空能級連續(xù)拂共，但是不是constant，電子親和能是不變的姻几，所以真空能級也相應彎曲宜狐。
- J = Js * [exp(qv/nkT) - 1] 低摻雜時，Js是常量蛇捌，n接近1抚恒；摻雜濃度提高，I-V曲線就越發(fā)不像pn結了络拌。
-
電流類型四種
MESFET
- GaAs不做MOSFET俭驮，因為表面態(tài)太大了。Si不怎么做MESFET春贸，因為允許加的電勢太谢炻堋？萍恕？
- unipolar device
- 一種 JFET（另一種是PNJFET）
- epitaxial layer of GaAs 摻雜濃度一般為 10^17 cm-3逸嘀，長在semi-insulating GaAs substrate上。
GaAs
- Drift velocity VS field curve presents a maximum at fields around 3 kV/cm at room temperature.
